Part Number |
K1413 |
Manufacturers |
Sanyo Semicon Device |
Logo |
|
Description |
2SK1413 |
Datasheet |
K1413 Datasheet (PDF) |
Ordering number:EN4229
N-Channel Silicon MOSFET
2SK1413
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). · Micaless package facilitating mounting.
Package Dimensions
unit:mm 2076B
[2SK1413]
3.4 16.0 5.0 8.0 5.6 3.1
21.0
22.0
4.0
2.8 2.0 20.4 1.0
2.0
0.6
2.0 1 2 3 3.5 5.45 5.45
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
1 : Gate 2 : Drain 3 : Source SANYO : TO-3PML
Conditions
Ratings 1500 ±20 2 4 3.0 60 150 –55 to +150
Unit V V A A W W
www.DataSheet.co.kr
PW≤10µs, duty cycle≤1% Tc=25°C
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Vol.