IS64WV12816BLL

www.DataSheet4U.com IS61WV12816BLL IS64WV12816BLL 128K x 16 HIGH-SPEED CMOS STATIC RAM ISSI FEBRUARY 2006 ® FEATURES High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V Operating Current: 25mA (typ.) Stand by Current: 400µA(typ.) TTL and CMOS compatible interface levels Fully static operation: no clock or refresh required Three state outputs Data control for upper and lower bytes Industrial and Automotive temperatures available Lead-free available DESCRIPTION The ISSI IS61WV12816BLL and IS64WV12816BLL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. They are fabricated using ISSI's highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61WV12816BLL and IS64WV12816BLL are packaged DataShee in the JEDEC standard 44-pin TSOP (Type II) and 48-pin mini BGA (6mm x 8mm). DataSheet4U.com FUNCTIONAL BLOCK DIAGRAM A0-A16 DECODER 128Kx16 MEMORY ARRAY VDD GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT COLUMN ...