XL1000

www.DataSheet4U.com 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier April 2005 - Rev 01-Apr-05 L1000 Chip Device Layout Features Self Bias Architecture Small Size 3.0 or 5.0 V Operation 20.0 dB Small Signal Gain 2.0 dB Noise Figure +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s three stage 20.0-40.0 GHz GaAs Absolute Maximum Ratings MMIC low noise amplifier has a small signal gain of 20.0 dB with a noise figure of 2.0 dB across the band. This Supply Voltage (Vd) +7.0 VDC MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT Supply Current (Id) 70 mA device model technology, and is based upon electron Input Power (Pin) +12 dBm beam lithography to ensure high repeatability and Storage Temperature (Tstg) -65 to +165 OC uniformity. The chip has surface passivation to protect Operating Temperature (Ta) -55 to MTTF Table 1 and provide a rugged part with backside via holes and Channel Temperature (Tch) MTTF Table 1 gold metallization to allow either a conductive DataSheet4U.com epoxy (1) Channel temperature affects a device's MTTF. It is or eutectic solder die attach process. This device is well recommended to keep channel temperature as low as possible for maximum life. suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. DataShee Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss ...