SD1899

www.DataSheet4U.com SD1899 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . . . REFRACTORY/GOLD METAL LIZATION EFFICIENCY - 50% TYPICAL POUT = 30 W MIN. WITH 9.3 dB GAIN .250 x .320 2LFL (M170) epoxy sealed ORDER CODE SD1899 BRANDING SD1899 PIN CONNECTION DataSheet4U.com DataShee DESCRIPTION The SD1899 is a common base silicon NPN bipolar device optimized for 1.6 GHz SATCOM applications. SD1899 offers superior gain and collector efficiency, making it an ideal choice for Class C power amplifiers used in portable as well as fixed SATCOM terminals. 1. Collector 2. Emitter 3. Base ABSOLUTE MAXIMUM RATINGS (T case = 25°C) Symbol Parameter Valu e Unit VCBO VCES VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation (+25°C) Junction Temperature Storage Temperature 45 45 3.0 3.5 64.8 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) DataSheet4U.com January 6, 1997 1/5 Junction-Case Thermal Resistance 2.7 °C/W DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com SD1899 ELECTRICAL SPECIFICATIONS (T case = 25°C) STATIC Symbol Test Conditions Min. Value Typ. Max. Unit BVCBO BVCES BVEBO ICBO hFE IC = 8 mA IC = 8 mA IE = 8 mA VCB = 28 V VCE = 5 V IE = 0 mA VBE = 0 V IC = 0 mA IE = 0 mA IC = 1.6 A 45 45 3.0 — 15 — — — — — — — — 2 150 V V V mA — DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Unit POUT ηc PG f = 1650 MHz f = 1650 MHz f = 1650 MHz VCC = 28 V VCC =...