STP9NK65ZFP

STP9NK65Z STP9NK65ZFP N-channel 650 V, 1 Ω, 6.4 A, TO-220, TO-220FP Zener-protected SuperMESH™ Power MOSFET Features Order codes STP9NK65Z STP9NK65ZFP VDSS 650 V 650 V RDS(on) max. < 1.2 Ω < 1.2 Ω ID 6.4 A 6.4 A Pw 125 W 30 W ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Extremely high dv/dt and avalanche capabilities Applications ■ Switching applications Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. 3 2 1 TO-220 3 2 1 TO-220FP Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STP9NK65Z P9NK65Z STP9NK65ZFP P9NK65ZFP Package TO-220 TO-220FP January 2012 Doc ID 8981 Rev 4 Packaging Tube Tube 1/16 www.st.com 16 Contents Contents STP9NK65Z, STP9NK65ZFP 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . ....