DatasheetsPDF.com

NST3946DXV6T5

ON Semiconductor

(NST3946DXV6T1 / NST3946DXV6T5) Dual General Purpose Transistor

www.DataSheet4U.com NST3946DXV6T1, NST3946DXV6T5 Dual General Purpose Transistor The NST3946DXV6T1 device is a spin- of...


ON Semiconductor

NST3946DXV6T5

File Download Download NST3946DXV6T5 Datasheet


Description
www.DataSheet4U.com NST3946DXV6T1, NST3946DXV6T5 Dual General Purpose Transistor The NST3946DXV6T1 device is a spin- off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT- 563 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. http://onsemi.com (3) (2) (1) hFE, 100-300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Lead-Free Solder Plating Q1 Q2 (4) (5) NST3946DXV6T1* *Q1 PNP Q2 NPN (6) MAXIMUM RATINGS Rating Collector - Emitter Voltage (NPN) (PNP) Collector - Base Voltage (NPN) (PNP) Emitter - Base Voltage (NPN) (PNP) Collector Current - Continuous (NPN) (PNP) Electrostatic Discharge Symbol VCEO 40 -40 60 -40 VEBO 6.0 -5.0 IC 200 -200 ESD HBM>16000, MM>2000 V mAdc 46 D Vdc Value Unit Vdc 1 6 54 2 3 DataShee DataSheet4U.com VCBO Vdc SOT-563 CASE 463A PLASTIC MARKING DIAGRAM 46 = Specific Device Code D = Date Code THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation Derate above 25°C Thermal Resistance Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation Derate above 25°C 1. FR-4 @ Minimum Pad TA = 25°C RqJA TA = 25°C ORDERING INFORMATION Symbol PD Max 357 (Note 1) 2.9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.0 (Note 1) Unit mW mW/°C ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)