NST3946DW1T1

www.DataSheet4U.com MBT3946DW1T1 Dual General Purpose Transistor The MBT3946DW1T1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363−6 surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium. http://onsemi.com (3) (2) (1) hFE, 100−300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7−inch/3,000 Unit Tape and Reel Device Marking: MBT3946DW1T1 = 46 Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish Q1 Q2 (4) (5) MBT3946DW1T1* *Q1 PNP Q2 NPN (6) 6 5 4 MAXIMUM RATINGS Rating Collector −Emitter Voltage (NPN) (PNP) Collector −Base Voltage (NPN) (PNP) Emitter −Base Voltage (NPN) (PNP) Collector Current − Continuous (NPN) (PNP) Electrostatic Discharge Symbol VCEO Value 40 −40 60 −40 VEBO 6.0 −5.0 IC 200 −200 ESD HBM>16000, MM>2000 V 46 = Specific Device Code d = Date Code Symbol PD RqJA TJ, Tstg Max 150 833 −55 to +150 Unit mW mAdc 46d Vdc Unit 1 2 3 DataShee Vdc DataSheet4U.com SOT−363−6/SC−88 CASE 419B Style 1 VCBO Vdc MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Package Dissipation (Note 1) TA = 25°C Thermal Resistance Junction−to−Ambient Junction and Storage Temperature Range ORDERING INFORMATION °C/W °C Device MBT3946DW1T1 Pac...