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NST3906DXV6T1 Dataheets PDF



Part Number NST3906DXV6T1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description (NST3906DXV6T1 / NST3906DXV6T5) Dual General Purpose Transistor
Datasheet NST3906DXV6T1 DatasheetNST3906DXV6T1 Datasheet (PDF)

www.DataSheet4U.com NST3906DXV6T1, NST3906DXV6T5 Dual General Purpose Transistor The NST3906DXV6T1 device is a spin- off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT- 563 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. http://onsemi.com (3) (2) (1) • • • • • • hFE, 100-300 Low.

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www.DataSheet4U.com NST3906DXV6T1, NST3906DXV6T5 Dual General Purpose Transistor The NST3906DXV6T1 device is a spin- off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT- 563 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. http://onsemi.com (3) (2) (1) • • • • • • hFE, 100-300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Lead-Free Solder Plating Q1 Q2 (4) (5) NST3906DXV6T1 (6) MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Electrostatic Discharge Symbol VCEO VCBO VEBO IC ESD Value -40 -40 Unit Vdc Vdc 6 54 2 3 1 DataSheet4U.com -5.0 Vdc -200 HBM>16000, MM>2000 mAdc V SOT-563 CASE 463A PLASTIC DataShee MARKING DIAGRAM A2 D THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation Derate above 25°C Thermal Resistance Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation Derate above 25°C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad RqJA TJ, Tstg TA = 25°C RqJA TA = 25°C Symbol PD Max 357 (Note 1) 2.9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.0 (Note 1) 250 (Note 1) - 55 to +150 Unit mW mW/°C A2 = Specific Device Code D = Date Code ORDERING INFORMATION °C/W Device NST3906DXV6T1 Package SOT-563 SOT-563 Shipping 4 mm pitch 4000/Tape & Reel 2 mm pitch 8000/Tape & Reel Symbol PD Unit mW mW/°C °C/W °C NST3906DXV6T5 DataSheet4U.com © Semiconductor Components Industries, LLC, 2003 1 March, 2003 - Rev. 0 Publication Order Number: NST3906DXV6T1/D DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com NST3906DXV6T1, NST3906DXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (Note 2) Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX -40 -40 -5.0 -50 -50 Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) Collector - Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) Base - Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) hFE 60 80 100 60 30 VCE(sat) VBE(sat) -0.65 -0.85 -0.95 -0.25 -0.4 Vdc 300 Vdc - SMALL- SIGNAL CHARACTERISTICS Current - Gain - Bandwidth Product Output Capacitance Input Capacitance Input Impedance (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Small - Signal Current Gain (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Output Admittance (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Noise Figure (VCE = -5.0 Vdc, IC = -100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz) fT Cobo Cibo 250 2.0 0.1 100 3.0 4.5 10.0 12 10 400 60 4.0 MHz pF pF kΩ X 10- 4 mmhos dB et4U.com DataShee DataSheet4U.com hie hre hfe hoe NF SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = -3.0 Vdc, VBE = 0.5 Vdc) (IC = -10 mAdc, IB1 = -1.0 mAdc) (VCC = -3.0 Vdc, IC = -10 mAdc) (IB1 = IB2 = -1.0 mAdc) td tr ts tf 35 35 225 75 ns ns 2. Pulse Test: Pulse Width ≤ 300 µs; Duty Cycle ≤ 2.0%. DataSheet4U.com http://onsemi.com 2 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com NST3906DXV6T1, NST3906DXV6T5 3V +9.1 V 275 < 1 ns +0.5 V 10 k 0 Cs < 4 pF* 10.6 V 300 ns DUTY CYCLE = 2% 10 < t1 < 500 ms DUTY CYCLE = 2% * Total shunt capacitance of test jig and connectors t1 10.9 V 1N916 Cs < 4 pF* 10 k < 1 ns 275 3V Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS 10 7.0 CAPACITANCE (pF) 5.0 Cobo Cibo 3.0 2.0 et4U.com DataShee DataSheet4U.com 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS) 20 30 40 Figure 3. Capacitance TJ = 25°C TJ = 125°C 500 300 200 100 70 50 30 20 10 7 5 IC/IB = 10 500 300 200 IC/IB = 20 t f , FALL TIME (ns) 100 70 50 30 20 10 7 5 IC/IB = 10 VCC = 40 V IB1 = IB2 TIME (ns) tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 4. Turn - On Time Figure 5. Fall Time DataSheet4U.com http://onsemi.com 3 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com NST3906DXV6T1, NST3906DXV6T5 TYPICAL AUDIO SMALL- SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = - 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 5.0 SOURCE RESISTANCE = 200 W IC =.


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