DatasheetsPDF.com

STK800 Dataheets PDF



Part Number STK800
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-channel Power MOSFET
Datasheet STK800 DatasheetSTK800 Datasheet (PDF)

www.DataSheet4U.com STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK® STripFET™ Power MOSFET General features Type STK800 ■ VDSS 30V RDS(on) <0.0078 Ω RDS(on)*Qg 80.4nC*mΩ PTOT 5.2W Ultra low top and bottom junction to case thermal resistance Very low capacitances 100% Rg tested Fully incapsulated die In compliance with the 2002/95/EC european directive PolarPAK® ■ ■ ■ ■ Description This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based .

  STK800   STK800


Document
www.DataSheet4U.com STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK® STripFET™ Power MOSFET General features Type STK800 ■ VDSS 30V RDS(on) <0.0078 Ω RDS(on)*Qg 80.4nC*mΩ PTOT 5.2W Ultra low top and bottom junction to case thermal resistance Very low capacitances 100% Rg tested Fully incapsulated die In compliance with the 2002/95/EC european directive PolarPAK® ■ ■ ■ ■ Description This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, moreover the double sides cooling package with ultra low junction to case thermal resistance allows to handle higher levels of current. Internal schematic diagram Applications ■ Switching application Bottom View Top View Order codes Part number STK800 Marking K800 Package PolarPAK ® Packaging Tape & reel March 2006 Rev 3 1/12 www.st.com 12 Contents STK800 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STK800 Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS (1) VGS(2) ID (4) ID IDM (3) PTOT (4) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at T C = 25°C Derating factor Value 30 ± 16 ± 18 20 12.5 80 5.2 0.0416 -55 to 150 Unit V V V A A A W W/°C °C Tj Tstg Operating junction temperature Storage temperature 1. Continuous mode 2. Guaranteed for test time <15ms 3. Pulse width limited by package 4. When mounted on FR-4 board of 1inch2 , 2 oz Cu and ≤ 10sec Table 2. Symbol Thermal data Parameter Typ. 20 1 2.8 Max. 24 1.2 3.4 Unit °C/W °C/W °C/W Rthj-amb(1) Thermal resistance junction-amb Rthj-c(2) Rthj-c(3) Thermal resistance junction-case (top drain) Thermal resistance junction-case (source) 1. When mounted on FR-4 board of 1inch2 , 2 oz Cu and ≤ 10sec 2. Steady State 3. Measured at Source pin when the device is mounted on FR-4 board in steady state 3/12 Electrical characteristics STK800 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol V(BR)DSS IDSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (V GS = 0) Gate body leakage current (V DS = 0) Gate threshold voltage Static drain-source on resistance Test condictions ID = 250µA, VGS= 0 VDS = Max rating, VDS = Max rating,Tc=125°C VGS = ±16V VDS= VGS, ID = 250µA VGS= 10V, ID= 10A VGS= 4.5V, ID= 10A 1 Min. 30 1 10 ±100 Typ. Max. Unit V µA µA nA V Ω Ω IGSS VGS(th) RDS(on) 2.5 0.006 0.0078 0.0075 0.0098 Table 4. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test condictions VDS =15V, ID = 10 A Min. Typ. 44 1380 450 75 13.4 3.4 4.5 Max. Unit S pF pF pF nC nC nC VDS =25V, f=1 MHz, VGS=0 VDD=15V, ID = 20A VGS =4.5V (see Figure 14) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 4/12 STK800 Electrical characteristics Table 5. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Test condictions VDD = 15V, ID= 10A, RG=4.7Ω, VGS=4.5V (see Figure 15) VDD =15V, ID= 10A, RG=4.7Ω, VGS=4.5V (see Figure 15) Min. Typ. 15 50 Max. Unit ns ns Turn-off delay time Fall time 45 15 ns ns Table 6. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on Voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 20A, V GS=0 ISD= 20A, di/dt = 100A/µs, VDD=20V, Tj=150°C (see Figure 15) 32 28.8 1.8 Test condictions Min. Typ. Max. 20 80 1.2 Unit A A V ns nC A 1. Pulse width limited by package 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/12 Electrical characteristics STK800 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/12 STK800 Figure 7. Gate charge vs gate-source voltage Figure 8. Electrical characteristics Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode fo.


LSH6335 STK800 K3306


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)