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STK800
N-channel 30V - 0.006Ω - 20A - PolarPAK® STripFET™ Power MOSFET
General features
Type STK800
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VDSS 30V
RDS(on) <0.0078 Ω
RDS(on)*Qg 80.4nC*mΩ
PTOT 5.2W
Ultra low top and bottom junction to case thermal resistance Very low capacitances 100% Rg tested Fully incapsulated die In compliance with the 2002/95/EC european directive
PolarPAK®
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Description
This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, moreover the double sides cooling package with ultra low junction to case thermal resistance allows to handle higher levels of current.
Internal schematic diagram
Applications
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Switching application
Bottom View
Top View
Order codes
Part number STK800 Marking K800 Package PolarPAK ® Packaging Tape & reel
March 2006
Rev 3
1/12
www.st.com 12
Contents
STK800
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STK800
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS (1) VGS(2) ID (4) ID IDM (3) PTOT (4)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate-source voltage Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at T C = 25°C Derating factor Value 30 ± 16 ± 18 20 12.5 80 5.2 0.0416 -55 to 150 Unit V V V A A A W W/°C °C
Tj Tstg
Operating junction temperature Storage temperature
1. Continuous mode 2. Guaranteed for test time <15ms 3. Pulse width limited by package 4. When mounted on FR-4 board of 1inch2 , 2 oz Cu and ≤ 10sec
Table 2.
Symbol
Thermal data
Parameter Typ. 20 1 2.8 Max. 24 1.2 3.4 Unit °C/W °C/W °C/W
Rthj-amb(1) Thermal resistance junction-amb Rthj-c(2) Rthj-c(3) Thermal resistance junction-case (top drain) Thermal resistance junction-case (source)
1. When mounted on FR-4 board of 1inch2 , 2 oz Cu and ≤ 10sec 2. Steady State 3. Measured at Source pin when the device is mounted on FR-4 board in steady state
3/12
Electrical characteristics
STK800
2
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table 3.
Symbol V(BR)DSS IDSS
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (V GS = 0) Gate body leakage current (V DS = 0) Gate threshold voltage Static drain-source on resistance Test condictions ID = 250µA, VGS= 0 VDS = Max rating, VDS = Max rating,Tc=125°C VGS = ±16V VDS= VGS, ID = 250µA VGS= 10V, ID= 10A VGS= 4.5V, ID= 10A 1 Min. 30 1 10
±100
Typ.
Max.
Unit V µA µA nA V Ω Ω
IGSS VGS(th) RDS(on)
2.5 0.006 0.0078 0.0075 0.0098
Table 4.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test condictions VDS =15V, ID = 10 A Min. Typ. 44 1380 450 75 13.4 3.4 4.5 Max. Unit S pF pF pF nC nC nC
VDS =25V, f=1 MHz, VGS=0
VDD=15V, ID = 20A VGS =4.5V (see Figure 14)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
4/12
STK800
Electrical characteristics
Table 5.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Test condictions VDD = 15V, ID= 10A, RG=4.7Ω, VGS=4.5V (see Figure 15) VDD =15V, ID= 10A, RG=4.7Ω, VGS=4.5V (see Figure 15) Min. Typ. 15 50 Max. Unit ns ns
Turn-off delay time Fall time
45 15
ns ns
Table 6.
Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on Voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 20A, V GS=0 ISD= 20A, di/dt = 100A/µs, VDD=20V, Tj=150°C (see Figure 15) 32 28.8 1.8 Test condictions Min. Typ. Max. 20 80 1.2 Unit A A V ns nC A
1. Pulse width limited by package 2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
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Electrical characteristics
STK800
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
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STK800 Figure 7. Gate charge vs gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain diode fo.