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2N7369

Part Number	2N7369
Manufacturer	Microsemi Corporation
Description	PNP HIGH POWER SILICON TRANSISTOR
Published	Aug 1, 2006
Detailed Description	com TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/621 Devices 2N7369 Qua...
Datasheet	2N7369 PDF File

Overview

com TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/621 Devices 2N7369 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Units Vdc Vdc Vdc Adc Adc W 0 C Unit 0 C/W Collector-Emitter Voltage 80 VCEO Collector-Base Voltage 80 VCBO Emitter-Base Voltage 7.
0 VEBO Base Current IB 4.
0 Collector Current 10 IC DataSheet4U.
com Total Power Dissipation @ TC = +250C (1) 115 PT Operating & Storage Junction Temperature Range -65 to +200 TJ, Tstg DataShee THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Symbol RθJC 0 Max.
1.
5 TO-254* 1) Derate linearly 0.
657 W/ C for TC > 25 C *See appendix A for package ...

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