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ISO-9001 CERTIFIED BY DSCC
M.S.KENNEDY CORP. FEATURES:
H-BRIDGE MOSFET POWER MODULE
3014
(315) 701-6751
4707 Dey Road Liverpool, N.Y. 13088 P and N Channel MOSFETs for Ease of Drive 100 Volt, 10 Amp Full H-Bridge Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity Avalanche Rated Devices
DESCRIPTION:
The MSK 3014 is an H-bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package. The MSK 3014 consists of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom transistors. The MSK 3014 uses M.S. Kennedy's proven power hybrid technology to bring a cost effective high perfomance circuit for use in today's sophisticated servo motor and disk drive systems.
EQUIVALENT SCHEMATIC
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TYPICAL APPLICATIONS
Stepper Motor Servo Control Disk Drive Head Control X-Y Table Control Az-El Antenna Control DataSheet4U.com
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PIN-OUT INFORMATION
1 2 3 4 5 6 Gate Q1 Source Q1 Drain 1,2 Gate Q2 N/C N/C 12 11 10 9 8 7 Source 4 Gate Q4 Drain 3,4 Gate Q3 N/C Source 2,3
Rev. B 7/00
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ABSOLUTE MAXIMUM RATINGS
VDSS VDGDR VGS ID IDM RTH-JC Drain to Source Voltage Drain to Gate Voltage (RGS=1MΩ) Gate to Source Voltage (Continuous) Continuous Current Pulsed Current Thermal Resistance (Junction to Case)
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100V MAX 100V MAX TJ TST TC TLD
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±20V MAX 10A MAX 25A MAX
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7.9°C/W
Single Pulse Avalanche Energy (Q2,Q4,Q6) 7.9mJ (Q1,Q3,Q5) 7.9mJ Junction Temperature +175°C MAX Storage Temperature -55°C to +150°C Case Operating Temperature Range -55°C to +125°C Lead Temperature Range (10 Seconds) 300°C MAX
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ELECTRICAL SPECIFICATIONS
Parameter
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate-Source Threshold Voltage Drain-Source On Resistance 2 Drain-Source On Resistance 3 Forward Transconductance N-Channel (Q2,Q3) Total Gate Charge Gate-Source Charge Gate-Drain Charge Rise Time Fall Time 1 1 1 1 1 1 1 1 1 1
Test Conditions 4
VGS=0 ID=0.25mA (All Transistors) VDS=100V VGS=0V (Q2,Q3) VDS=-100V VGS=0V (Q1,Q4) VGS=±20V VDS=0 (All Transistors) VDS=VGS ID=250µA (Q2,Q3) VDS=VGS ID=250µA (Q1,Q4) VGS=10V ID=9.0A (Q2,Q3) VGS=-10V ID=-8.4A (Q1,Q4) VGS=10V ID=9.0A (Q2,Q3) VGS=10V ID=-8.4A (Q1,Q4) VDS=50V ID=9.0A (Q2,Q3) VDS=-50V ID=-8.4A (Q1,Q4) ID=9.0A
MSK3014 Min. 100 2.0 2.0 6.4 3.2 Typ. 6.4 27 37 25 640 160 88 15 58 45 46 760 260 170 1.3 -1.6 130 130 650 650 Max. 25 -25 ±100 4.0 4.0 0.20 0.28 0.11 0.20 44 6.2 21 58 8.3 32 190 190 970 970 Units V µA µA nA V V Ω Ω Ω Ω S S nC nC nC nS nS nS nS pF pF pF nC nC nC nS nS nS nS pF pF pF V V nS nS µC µC
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VDS=80V VGS=10V VDD=50V ID=9.0A RG=12Ω RD=5.5Ω VGS=0V VDS=25V f=1.0MHz ID=-8.4A VDS=-80V VGS=-10V VDD=-50V ID=-8.4A RG=9.1Ω RD=6.2Ω VGS=0V
Turn-On Delay Time 1 Turn-Off Delay Time Input Capacitance Output Capacitance P-CHANNEL (Q1,Q3,Q5) Total Gate Charge 1 Gate-Source Charge 1 Gate-Drain Charge 1 Turn-On Delay Time 1 Rise Time Fall Time 1 1 1 1 1 Turn-Off Delay Time Input Capacitance Output Capacitance BODY DIODE Forward On Voltage 1 1 1
Reverse Transfer Capacitance
VDS=-25V f=1.0MHz IS=9.0A VGS=0V (Q2,Q3) IS=-8.4A VGS=0V (Q1,Q4) IS=9.0A di/dt=100A/µS (Q2,Q3) IS=-8.4A di/dt=100A/µS (Q1,Q4) IS=9.0A di/dt=100A/µS (Q2,Q3) IS=-8.4A di/dt=100A/µS (Q1,Q4)
Reverse Transfer Capacitance 1
Reverse Recovery Time Reverse Recovery Charge
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1 2 3 4
This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only. Resistance as seen at package pins. Resistance for die only; use for thermal calculations. Rev. B 7/00 TA=25°C unless otherwise specified. 2
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APPLICATION NOTES N-CHANNEL GATES (Q2,Q3)
For driving the N-Channel gates, it is important to keep in mind that it is essentially like driving a capacitance to a sufficient voltage to get the channel fully on. Driving the gates to +15 volts with respect to their sources assures that the transistors are on. This will keep the dissipation down to a minimum level [RDS(ON) specified in the data sheet]. How quickly the gate gets turned ON and OFF will determine the dissipation of the transistor while it is transitioning from OFF to ON, and vice-versa. Turning the gate ON and OFF too slow will cause excessive dissipation, while turning it ON and OFF too fast will cause excessive switching noise in the system. It is important to have as low a driving impedance as practical for the size of the transistor. Many motor drive IC's have sufficient gate drive capability for the MSK 3014. If.