KM48V514D

www.DataSheet4U.com KM48C514D, KM48V514D CMOS DRAM 512K x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage(+5.0V or +3.3V), Access time(-5,-6,-7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 512Kx8 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as main memory unit for microcomputer, personal computer and portable machines. Extended Data Out Mode operation FEATURES Part Identification - KM48C514D/DL (5V, 1K Ref.) - KM48V514D/DL (3.3V, 1K Ref.) Active Power Dissipation Unit : mW Speed -5 -6 -7 Refresh Cycles Part NO. C514D V514D VCC 5V 3.3V Refresh cycle 1K Refresh period Normal 16ms L-ver 128ms RAS CAS W Byte Read/Write operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Self-refresh capability (L-ver only) TTL(5V)/LVTTL(3.3V) compatible inputs and outputs Early Write or output enable controlled write JEDEC Standard pinout Available in 28-pin SOJ 400mil & TSOP(II) 400mil packages 5V (1K Ref...