TIM1414-8L

www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band) Features Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level High power - P1dB = 39.5 dBm at 14.0 GHz to 14.5 GHz High gain - G1dB = 5.0 dB at 14.0 GHz to 14.5 GHz Broad band internally matched Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel-Temperature Rise Symbol P1dB G1dB IDS1 ∆G ηadd IM3 IDS2 ∆Tch VDSxIDSxRth(c-c) Condition Unit dBm dB A dB Min. 38.5 4.0 – – – -42 – – Typ. 39.5 5.0 3.4 – 20 -45 3.4 – Max – – 4.4 ±0.8 – – 4.4 80 TIM1414-8L VDS = 9V f = 14.0 ~ 14.5 GHz DataShee DataSheet4U.com Note 1 % dBc A °C Note 1: 2 Tone Test (Pout = 28 dBm Single Carrier Level). Electrical Characteristics (Ta = 25° C) Characteristic Trans-conductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance Symbol gm VGSoff IDSS VGSO Rth (c-c) Condition VDS = 3V IDS = 4.0A VDS = 3V IDS = 120mA VDS = 3V VGS = 0V IGS = -120µA Channel to case Unit mS V A V °C/W Min. – -2 – -5 – Typ. 2400 -3.5 8.0 – 1.6 Max – -5 10.4 – 2.5 DataSheet4U.com The information contained here is subject to change without notice. The information contained herein is presented only as guide for the ...