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TIM1414-10LA-252

Part Number	TIM1414-10LA-252
Manufacturer	Toshiba
Description	Microwave Power GaAs FET
Published	Jul 30, 2006
Detailed Description	www.DataSheet4U.com TOSHIBA Oct. 1999 TIM1414-10LA-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power a...
Datasheet	TIM1414-10LA-252 PDF File

Overview

www.
DataSheet4U.
com TOSHIBA Oct.
1999 TIM1414-10LA-252 1.
RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Channel Temperature Rise SYMBOL P1dB VDS= 9V G1dB IDS f =13.
75-14.
5GHz 4.
5 2-tone test Po=29dBm(SCL) VDS x IDS x Rth -42 5.
5 4.
0 23 -45 5.
0 90 dB A % dBc °C ( Ta= Ta= 25°C ) MIN.
TYP.
MAX.
UNIT 39.
0 39.
5 dBm CONDITION ηadd IM3 ∆Tch DataSheet4U.
com DataShee 2.
ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL ( Ta= Ta= 25°C ) MIN.
...

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TIM1414-10LA-252 Microwave Power GaAs FET - Toshiba

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