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TIM1414-7

Toshiba Semiconductor
Part Number TIM1414-7
Manufacturer Toshiba Semiconductor
Description MICROWAVE POWER GaAs FET
Features ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 38.5dBm at 14.0GHz to 14.5GHz ・HIGH GAIN G1dB= 6.5dB at 14.0GHz to ...
Published Jul 30, 2006
Datasheet PDF File TIM1414-7 PDF File


TIM1414-7
TIM1414-7


Features
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 38.5dBm at 14.0GHz to 14.5GHz ・HIGH GAIN G1dB= 6.5dB at 14.0GHz to 14.5GHz ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1414-7 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERIST...



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