2SD1695

www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SD1695 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators. PACKAGE DRAWING (UNIT: mm) FEATURES On-chip protection elements enable time and cost reduction. C to E: Dumper diode C to B: Constant diode Low collector saturation voltage QUALITY GRADES Standard DataShee DataSheet4U.com Electrode Connection 1. Emitter 2. Collector 3. Base 4. Collector (fin) Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Ta = 25°C) PT (Tc = 25°C) Tj Tstg Ratings 31 ±4 31 ±4 8.0 ±2.0 ±3.0 0.2 1.3 10 150 −55 to +150 Unit V V V A A A W W °C °C * PW ≤ 10 ms, duty cycle ≤ 50% The information in this document is subject to cha...