STK0260D

www.DataSheet4U.com Semiconductor STK0260D Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features High Voltage: BVDSS=600V(Min.) Low Crss : Crss=6.0pF(Typ.) Low gate charge : Qg=8.4nC(Typ.) Low RDS(on) :RDS(on)=4.0Ω(Max.) Type NO. STK0260D Marking STK0260 Package Code D-PAK Ordering Information Outline Dimensions unit : mm 6.50~6.70 5.10~5.50 DataSheet4U.com 1.18 Max. 2.10~2.50 DataShee 7.77~7.97 1.15 Max. 0.83 Max. 2.30 Typ. 2.30 Typ. 0.55 Max. 1 2 3 PIN Connections 1. Gate 2. Drain 3. Source DataSheet4U.com KSD-T6O004-000 DataSheet4U.com DataSheet 4 U .com 1 www.DataSheet4U.com STK0260D Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) * (Tc=25°C) Symbol VDSS VGSS ID (Tc=25℃) (Tc=125℃) IDP PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 600 ±30 2.0 1.2 8.0 34 2.0 42 2.0 3.7 150 -55~150 Unit V V A A A W A mJ A mJ °C Drain Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Junction-case Junction-ambient Symbol Rth(J-C) DataSheet4U.com Rth(J-a) Typ. - Max 3.67 62.5 Unit ℃/W Thermal et4U.com resistance DataShee DataSheet4U.com KSD-T6O004-000 DataSheet4U.com DataSheet 4 U .com 2 www.DataSheet4U.com STK0260D Electrical Characteristics Characteristic Drain-source breakdown v...