STK0260

www.DataSheet4U.com Semiconductor STK0260 Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features High Voltage: BVDSS=600V(Min.) Low Crss : Crss=6.0pF(Typ.) Low gate charge : Qg=8.4nC(Typ.) Low RDS(on) :RDS(on)=4.7Ω(Max.) Type NO. STK0260 Marking STK0260 Package Code MPT Ordering Information Outline Dimensions 7.30~7.50 unit : mm DataSheet4U.com 8.40~8.60 DataShee 1.20 Max. 1.70 Typ. 0.70 Max. 13.05~13.85 2.50 Typ. 0.60 Max. 2.50 Typ. 1 2 3 0.60 Max. 3.30~3.50 DataSheet4U.com 1.95~2.05 PIN Connections 1. Gate 2. Drain 3. Source KSD-T0H010-001 DataSheet4U.com DataSheet 4 U .com 1 www.DataSheet4U.com STK0260 Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) * (Ta=25°C) Symbol VDSS VGSS ID IDP PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 600 ±30 0.6 2.4 1.3 0.6 3.9 0.6 110 150 -55~150 Unit V V A A W A mJ A µJ °C Drain Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Symbol Rth(J-a) DataSheet4U.com Typ. - Max 96.2 Unit Junction-ambient et4U.com DataShee DataSheet4U.com KSD-T0H010-001 DataSheet4U.com DataSheet 4 U .com 2 www.DataSheet4U.com STK0260 Electrical Characteristics Characteristic Drain-source breakdown voltage Gate-threshold voltage Drain-s...