IRFS640A

www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 Ω (Typ. ) 1 IRFS640A BVDSS = 200 V RDS(on) = 0.18 Ω ID = 9.8 A TO-220F 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed 1 O DataSheet4U.com Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 oC ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds o Value 200 9.8 6.2 72 + _ 30 256 9.8 4.3 5.0 43 0.35 - 55 to +150 Units V A A V mJ A mJ V/ns W W/ C o DataShe e O 1 O 1 O 3 O 2 o C 300 Thermal Resistance Symbol R θJC RθJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 2.89 62.5 Units o C/W Rev. B ©1999 Fairchild Semiconductor Corporation DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com IRFS640A Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Vol...