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IRFS640A

Advanced Power MOSFET

Description

www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 Ω (Typ. ) 1 IRFS640A BVDSS = 200 V RDS(on) = 0.18 Ω ID = 9.8 A TO-220F 2 3 1.Gate 2. Drain 3. Source ...

Fairchild Semiconductor

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