AUTOMOTIVE MOSFET
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PD - 95950
AUTOMOTIVE MOSFET
IRFR48ZPbF IRFU48ZPbF
HEXFET® Power MOSFET
D
Features
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...
Description
www.DataSheet4U.com
PD - 95950
AUTOMOTIVE MOSFET
IRFR48ZPbF IRFU48ZPbF
HEXFET® Power MOSFET
D
Features
l l l l l l
Description
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 55V RDS(on) = 11mΩ
G S
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications DataSheet4U.com and a wide variety of other applications.
ID = 42A
DataShee
D-Pak IRFR48Z
Max.
62 44 42 250 91 0.61 ± 20 W W/°C V mJ A mJ -55 to + 175 °C 300 (1.6mm from case ) 10 lbf in (1.1N m) A
I-Pak IRFU48Z
Units
Absolute Maximum Ratings
Parameter
I D @ T C = 25°C Continuous Drain Current, V GS @ 10V (Silicon Limited) I D @ T C = 100°C Continuous Drain Current, V GS @ 10V I D @ T C = 25°C Continuous Drain Current, V GS @ 10V (Package Limited) Pulsed Drain Current I DM
P D @T C = 25°C Power Dissipation V GS E AS (Tested ) I AR E AR TJ T STG Linear Derating Factor Gate-to-Source Voltage
E AS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current
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74 110 See Fig....
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