IRFR48Z

www.DataSheet4U.com PD - 96924 AUTOMOTIVE MOSFET IRFR48Z IRFU48Z HEXFET® Power MOSFET D Features Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l VDSS = 55V RDS(on) = 11mΩ Description G S Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications DataSheet4U.com and a wide variety of other applications. ID = 42A ee DataSh D-Pak IRFR48Z Max. 62 44 42 250 91 0.61 ± 20 W W/°C V mJ A mJ -55 to + 175 °C 300 (1.6mm from case ) 10 lbf in (1.1N m) A I-Pak IRFU48Z Units Absolute Maximum Ratings Parameter I D @ T C = 25°C Continuous Drain Current, V GS @ 10V (Silicon Limited) I D @ T C = 100°C Continuous Drain Current, V GS @ 10V I D @ T C = 25°C Continuous Drain Current, V GS @ 10V (Package Limited) Pulsed Drain Current I DM ™ P D @T C = 25°C Power Dissipation V GS E AS (Tested ) I AR E AR TJ T STG Linear Derating Factor Gate-to-Source Voltage E AS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current d Ù h 74 110 See Fig.12a, 12b, 15, 16 Repe...