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MRF422MP

Advanced Semiconductor

NPN SILICON RF POWER TRANSISTOR

MRF422 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF422 is Designed for 2.0 MHz to 30 MHz, 28 V High Power L...


Advanced Semiconductor

MRF422MP

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Description
MRF422 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF422 is Designed for 2.0 MHz to 30 MHz, 28 V High Power Linear Amplifier Applications. MAXIMUM RATINGS I 20 A V PDISS TJ TSTG θJC 40 V 290 W @ TC = 25 OC -65 OC to +150 OC -65 OC to +150 OC 0.6 OC/W PACKAGE STYLE .500 4L FLG 1 = COLLECTOR 3 = BASE 2 & 4 = EMITTER NONE CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS BVCEO IC = 200 mA BVCES IC = 100 mA BVCBO IC = 100 mA BVEBO IE = 10 mA ICES VCE = 28 V hFE VCE = 5.0 V IC = 5.0 A MINIMUM TYPICAL MAXIMUM 35 85 85 3.0 20 10 30 120 UNITS V V V V mA --- Cob VCB = 28 V f = 1.0 MHz 420 pF Pout GPE η IMD VCE = 28 V VCC = 28 V IC(max) = 6.7 A ICQ = 150 mA f = 30 MHz Pout = 150 W (PEP) f = 30 MHz 150 10 13 45 -33 W(PEP) dB % dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...




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