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SZM-3066Z Dataheets PDF



Part Number SZM-3066Z
Manufacturers Sirenza
Logo Sirenza
Description 2W Power AMplifier
Datasheet SZM-3066Z DatasheetSZM-3066Z Datasheet (PDF)

www.DataSheet4U.com Preliminary Product Description Sirenza Microdevices’ SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a final or driver stage for 802.16 equipment in the 3.3-3.8 GHz.

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www.DataSheet4U.com Preliminary Product Description Sirenza Microdevices’ SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a final or driver stage for 802.16 equipment in the 3.3-3.8 GHz bands. It can run from a 3V to 6V supply. The external output match and bias adjustability allows load line optimization for other applications or over narrower bands. It features an output power detector, on/ off power control and high RF overdrive robustness. This product features a RoHS compliant and Green package with matte tin finish, designated by the ‘Z’ suffix. SZM-3066Z 3.3-3.8GHz 2W Power Amplifier RoHS Compliant & Green Package Pb 6mm x 6mm QFN Package Functional Block Diagram Vcc = 5V • • • Product Features P1dB =33.5dBm @ 5V Three Stages of Gain: 34dB 802.11g 54Mb/s Class AB Performance Pout = 26dBm @ 2.5% EVM, Vcc 5V,730mA RFIN Vbias = 5V Stage 1 Bias Stage 2 Bias Stage 3 Bias • Active Bias with Adjustable Current • On-chip Output Power Detector • Low Thermal Resistance • Power up/down control < 1µs DataSheet4U.com • Class 1C ESD Rating RFOUT DataShee Power Up/Dow n Control Pow er Detector Applications Key Specifications Symbol fO P1dB S21 Pout IM3 NF IRL ORL Vcc Vdet Range Icq IVPC Ileak Rth, j-l Frequency of Operation Output Power at 1dB Compression – 3.5GHz Small Signal Gain @ Pout = 26dBm – 3.5GHz • • 802.16 WiMAX Driver or Output Stage Fixed Wireless, WLL Unit MHz dBm dB dBm dBc dB dB V V mA mA mA ºC/W 10 520 9 6 3 32.5 Min. 3300 33.5 34 26 -38 5 14 9 5 0.9 to 2.2 600 5 0.1 680 6 -33 Typ. Max. 3800 Parameters: Test Conditions, 3.3-3.8GHz App circuit, Z0 = 50Ω, VCC = 5.0V, Iq = 600mA, TBP = 30ºC Output power at 2.5% EVM 802.11g 54Mb/s - 3.5GHz Third Order Suppression (Pout=23dBm per tone) - 3.5GHz Noise Figure at 3.6 GHz Worst Case Input Return Loss 3.3-3.8GHz Worst Case Output Return Loss 3.3-3.8GHz Supply voltage range Output Voltage Range for Pout=10dBm to 33dBm Quiescent Current (Vcc = 5V) Power Up Control Current (Vpc=5V) ( IVPC1 +IVPC2+ IVPC3 ) Vcc Leakage Current (Vcc = 5V, Vpc = 0V) Thermal Resistance (junction - lead) The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-104608 Rev C DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com Preliminary SZM-3066Z 3.3-3.8GHz 2W Power Amp Typical Performance 3.3-3.8GHz App Circuit (Vcc=5V, Icq=600mA, * 802.11g 54Mb/s 64QAM) Parameter Gain @ Pout=26dBm P1dB Pout @ 2.5% EVM* Current @ Pout 2.5% EVM* Input Return Loss Output Return Loss Units dB dBm dBm mA dB dB 3.3GHz 35.2 34.4 26.5 769 15 10 3.4GHz 35.2 34.3 26.5 769 17 10.5 3.5GHz 35.2 34.3 26.5 752 19 10 3.6GHz 34.5 34.1 26.5 750 21 9 3.7GHz 32.8 33.9 26 750 19 9 3.8GHz 30.0 33.0 26 720 16 8 et4U.com Absolute Maximum Ratings Parameters VC3 Collector Bias Current (IVC3) VC2 Collector Bias Current (IVC2) VC1 Collector Bias Current (IVC1) **Device Voltage (VD) Power Dissipation Operating Lead Temperature (TL) *Max RF output Power for 50 ohm continuous long term operation Max RF Input Power for 50 ohm output load Max RF Input Power for 10:1 VSWR output load Storage Temperature Range Operating Junction Temperature (TJ) ESD Human Body Model Value 1500 600 300 9.0 6 -40 to +85 30 29 5 -40 to +150 +150 1000 Unit mA DataSheet4U.com mA mA V W ºC DataShee Caution: ESD Sensitive dBm dBm dBm ºC ºC V Appropriate precaution in handling, packaging and testing devices must be observed. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH’ j-l * With specified application circuit. ** No RF Drive 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-104608 Rev C DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com Preliminar.


CLT-18-6007 SZM-3066Z STR-S6309


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