(IXGX60N60B2D1 / IXGK60N60B2D1) HiPerFAST IGBT with Diode
www.DataSheet4U.com
Advance Technical Data
HiPerFAST TM IGBT with Diode
Optimized for 10-25 kHz hard switching and up ...
Description
www.DataSheet4U.com
Advance Technical Data
HiPerFAST TM IGBT with Diode
Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching
IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE(sat) tfi(typ)
= 600 V = 75 A < 1.8 V = 100 ns
Symbol V CES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C
Maximum Ratings 600 600 ± 20 ± 30 75 60 300 ICM = 150 V V V V A A A A
TO-264 AA (IXGK)
(TAB) C E
G
PLUS247 (IXGX)
(TAB)
DataSheet4U.com
500 -55 ... +150 150 -55 ... +150 W °C °C °C
G = Gate E = Emitter
C = Collector Tab = Collector
DataShee
Mounting torque, TO-264 TO-264 PLUS247
1.13/10 Nm/lb.in. 10 6 300 g g °C
Features Square RBSOA High current handling capability MOS Gate turn-on for drive simplicity Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications Switch-mode and resonant-mode power supplies Uninterruptible power supplies (UPS) DC choppers AC motor speed control DC servo and robot drives
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 3.0 TJ = 125°C 5.0 300 5 ± 100 1.8 V µA mA nA V
VGE(th) ICES IGES VCE(sat)
IC
= 250 µA, VCE = VGE
VCE = ...
Similar Datasheet