DatasheetsPDF.com

H11-A1 Dataheets PDF



Part Number H11-A1
Manufacturers ETC
Logo ETC
Description H11A1
Datasheet H11-A1 DatasheetH11-A1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by H11A1/D www.DataSheet4U.com GlobalOptoisolator™ H11A1 * [CTR = 50% Min] *Motorola Preferred Device 6-Pin DIP Optoisolators Transistor Output The H11A1 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Current Transfer Ratios (CTR) 30% and 50% • Economical Optoisolators for General Purpose/High Volume Applications • To order devices that are tested an.

  H11-A1   H11-A1



Document
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by H11A1/D www.DataSheet4U.com GlobalOptoisolator™ H11A1 * [CTR = 50% Min] *Motorola Preferred Device 6-Pin DIP Optoisolators Transistor Output The H11A1 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Current Transfer Ratios (CTR) 30% and 50% • Economical Optoisolators for General Purpose/High Volume Applications • To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option. Applications • General Purpose Switching Circuits • Interfacing and coupling systems of different potentials and impedances • Monitor and Detection Circuits MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating INPUT LED Reverse Voltage Forward Current — Continuous LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C OUTPUT TRANSISTOR Collector–Emitter Voltage Emitter–Collector Voltage Collector–Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C TOTAL DEVICE Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range(2) Storage Temperature Range(2) Soldering Temperature (10 sec, 1/16″ from case) VISO PD TA Tstg TL 7500 250 2.94 – 55 to +100 – 55 to +150 260 Vac(pk) mW mW/°C °C °C °C VCEO VECO VCBO IC PD 30 7 70 150 150 1.76 Volts Volts Volts mA mW mW/°C VR IF PD 3 60 120 1.41 Volts mA mW mW/°C Symbol Value Unit STYLE 1 PLASTIC 6 1 STANDARD THRU HOLE CASE 730A–04 SCHEMATIC 1 2 3 PIN 1. 2. 3. 4. 5. 6. LED ANODE LED CATHODE N.C. EMITTER COLLECTOR BASE 6 5 4 1. Isolation surge voltage is an internal device dielectric breakdown rating. 1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions. Preferred devices are Motorola recommended choices for future use and best overall value. GlobalOptoisolator is a trademark of Motorola, Inc. REV 1 Optoelectronics Device Data ©Motorola Motorola, Inc. 1995 1 H11A1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1) Characteristic INPUT LED www.DataSheet4U.com Forward Voltage (IF = 10 mA, Symbol Min Typ(1) Max Unit TA = 25°C) TA = –55°C TA = 100°C VF — — — — — 1.15 1.3 1.05 0.01 18 1.5 — — 10 — Volts Reverse Leakage Current (VR = 3 V) Capacitance (V = 0 V, f = 1 MHz) OUTPUT TRANSISTOR Collector–Emitter Dark Current (VCE = 10 V) Collector–Base Dark Current (VCB = 10 V) Collector–Emitter Breakdown Voltage (IC = 10 mA) Collector–Base Breakdown Voltage (IC = 100 µA) Emitter–Collector Breakdown Voltage (IE = 100 µA) DC Current Gain (IC = 5 mA, VCE = 5 V) (Typical Value) Collector–Emitter Capacitance (f = 1 MHz, VCE = 0 V) Collector–Base Cap.


H11-C1 H11-A1 H11A3


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)