IRF630MFP

www.DataSheet4U.com N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF630M IRF630FPM s s s s IRF630M IRF630MFP VDSS 200 V 200 V RDS(on) < 0.40 Ω < 0.40 Ω ID 9A 9A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-220 3 1 2 1 2 3 TO-220FP DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and INTERNAL SCHEMATIC DIAGRAM improves the performances compared with standard parts from various sources. Isolated TO-220 option simplifies assembly and cuts risk of accidental short circuit in crowded monitor PCB’s. DataSheet4U.com .APPLICATIONS s MONITOR DISPLAYS s GENERAL PURPOSE SWITCH DataSh ee ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Parameter IRF630M Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 9 5.7 36 75 0.6 5 -–65 to 150 150 (1)ISD ≤9A, di/dt ≤300A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. (**) Limited only by Maximum Temperature Allowed Value IRF630MFP 200 200 ± 20 9 (**) 5.7 (**) 36 30 0.24 5 2500 Unit V V V A A A W W/°C V/ns V °C °C ()Pulse wi...