STB5NB80

www.DataSheet4U.com ® STB5NB80 N - CHANNEL 800V - 1.8Ω - 5A - D2PAK PowerMESH™ MOSFET TYPE ST B5NB80 s s s s s s V DSS 800 V R DS(on) < 2.2 Ω ID 5 A D2PAK TO-263 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the INTERNAL SCHEMATIC DIAGRAM lowest RDS(on) per area, exceptional avalanche DataSheet4U.com and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s DC-AC CONVERTERS FOR WELDING s EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS ID ID I DM ( ) P tot dv/dt( 1) T s tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at T c = 25 oC Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. Operating Junction T emperature o o TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL 3 1 DataShee Value 800 800 ± 30 5 3.2 20 110 0.88 4 -65 to 150 150 Unit V V V A A A W W/ C V/ns o o o C C (*) Limit...