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STB5BK50Z-1 Dataheets PDF



Part Number STB5BK50Z-1
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL POWER MOSFET
Datasheet STB5BK50Z-1 DatasheetSTB5BK50Z-1 Datasheet (PDF)

www.DataSheet4U.com STB5NK50Z-1 - STP5NK50ZFP STP5NK50Z - STD5NK50Z - STD5NK50Z-1 N-CHANNEL500V-1.22Ω-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH™Power MOSFET TYPE STP5NK50Z STP5NK50ZFP STD5NK50Z STD5NK50Z-1 STB5BK50Z-1 s s s s s s VDSS 500 500 500 500 500 V V V V V RDS(on) < 1.5 < 1.5 < 1.5 < 1.5 < 1.5 Ω Ω Ω Ω Ω ID 4.4 A 4.4 A 4.4 A 4.4 A 4.4 A Pw 70 W 25 W 70 W 70 W 70 W 1 2 3 TYPICAL RDS(on) = 1.22 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZE.

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www.DataSheet4U.com STB5NK50Z-1 - STP5NK50ZFP STP5NK50Z - STD5NK50Z - STD5NK50Z-1 N-CHANNEL500V-1.22Ω-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH™Power MOSFET TYPE STP5NK50Z STP5NK50ZFP STD5NK50Z STD5NK50Z-1 STB5BK50Z-1 s s s s s s VDSS 500 500 500 500 500 V V V V V RDS(on) < 1.5 < 1.5 < 1.5 < 1.5 < 1.5 Ω Ω Ω Ω Ω ID 4.4 A 4.4 A 4.4 A 4.4 A 4.4 A Pw 70 W 25 W 70 W 70 W 70 W 1 2 3 TYPICAL RDS(on) = 1.22 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 I2PAK 3 1 3 12 TO-220FP 3 2 1 DPAK IPAK DESCRIPTION The SuperMESH™ series is obtained through an INTERNAL SCHEMATIC DIAGRAM extreme optimization of ST’s well established stripDataSheet4U.com based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. DataShee APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING s ORDERING INFORMATION SALES TYPE STP5NK50Z STP5NK50ZFP STD5NK50ZT4 STD5NK50Z-1 STB5NK50Z-1 April 2003 MARKING P5NK50Z P5NK50ZFP D5NK50Z D5NK50Z B5NK50Z PACKAGE TO-220 TO-220FP DPAK IPAK I2PAK PACKAGING TUBE TUBE TAPE & REEL TUBE TUBE 1/14 DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP5NK50Z STB5NK50Z-1 Value STP5NK50ZFP STD5NK50Z STD5NK50Z-1 Unit VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 4.4 2.7 17.6 70 0.56 500 500 ± 30 4.4 (*) 2.7 (*) 17.6 (*) 25 0.2 3000 4.5 2500 -55 to 150 -55 to 150 4.4 2.7 17.6 70 0.56 V V V A A A W W/°C V V/ns V °C °C ( ) Pulse width limited by safe operating area (1) ISD ≤4.4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 I2PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max DataSheet4U.com Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.78 TO-220FP 5 62.5 300 DPAK 1.78 °C/W °C/W °C et4U.com DataShee AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 4.4 130 Unit A mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/14 DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID =1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20V VDS = VGS, ID = 50µA VGS = 10V, ID = 2.2 A 3 3.75 1.22 Min. 500 1 50 ±10 4.5 1.5 Typ. Max. Unit V µA µA µA V Ω DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS =15 V, ID = 2.2 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 3.1 535 75 17 45 Max. Unit S pF pF pF pF VGS = 0V, VDS = 0V to 400V SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Test Conditions VDD = 250 V, ID = 2.2 A RG = 4.7Ω VGS = 10 V DataSheet4U.com (Resistive Load see, Figure 3) VDD = 400V, ID = 4.4 A, VGS = 10V Min. Typ. 15 10 20 4 10 28 Max. Unit ns ns nC nC nC et4U.com DataShee SWITCHING OFF Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-.


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