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STP55NF03L STB55NF03L STB55NF03L-1
N-CHANNEL 30V - 0.01 Ω - 55A TO-220/D2PAK/I2PAK STripFET™ II POWER MOSFET
TYPE STP55NF03L STB55NF03L STB55NF03L-1
s s
VDSS 30 V 30 V 30 V
RDS(on) <0.013 Ω <0.013 Ω <0.013 Ω
ID 55 A 55 A 55 A
3 1
3 12
s s
TYPICAL RDS(on) = 0.01 Ω OPTIMIZED FOR HIGH SWITCHING OPERATIONS LOW GATE CHARGE LOGIC LEVEL GATE DRIVE
D2PAK TO-263
I2PAK TO-262
3 DESCRIPTION 2 1 This Power MOSFET is the latest development of TO-220 STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and INTERNAL SCHEMATIC DIAGRAM less critical alignment steps therefore a remarkable manufacturing reproducibility. DataSheet4U.com APPLICATIONS s LOW VOLTAGE DC-DC CONVERTERS s HIGH CURRENT, HIGH SWITCHING SPEED s HIGH EFFICIENCY SWITCHING CIRCUITS
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ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM(•) Ptot Tstg Tj March 2002
.
Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature
Value 30 30 ± 16 55 39 220 80 0.53 -60 to 175 175
Unit V V V A A A W W/°C °C °C 1/11
(•) Pulse width limited by safe operating area.
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STP55NF03L STB55NF03L/-1
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 1.875 62.5 300 °C/W °C/W °C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF
Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 16V Min. 30 1 10 ±100 Typ. Max. Unit V µA µA nA
IGSS
ON (*)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 4.5 V ID = 250 µA ID = 27.5 A ID = 27.5 A Min. 1 0.01 0.013 0.013 0.020 Typ. Max. Unit V Ω Ω
DYNAMIC
Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
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Test Conditions
Min.
Typ. 30 1265 435 115
Max.
Unit S pF pF pF
VDS > ID(on) x RDS(on)max, ID = 27.5 A VDS = 25V, f = 1 MHz, VGS = 0
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STP55NF03L STB55NF03L/-1
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 27.5 A VDD = 15 V RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Fig.