STB55NF03L

www.DataSheet4U.com ® STB55NF03L N-CHANNEL 30V - 0.01 Ω - 55A D2PAK STripFET™ POWER MOSFET T YPE STB55NF03L s s V DSS 30 V R DS(on) < 0.013 Ω ID 55 A s s TYPICAL RDS(on) = 0.01 Ω OPTIMIMIZED FOR HIGH SWITCHING OPERATIONS LOW GATE CHARGE LOGIC LEVEL GATE DRIVE 3 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. D2PAK TO-263 ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s LOW VOLTAGE DC-DC CONVERTERS DataSheet4U.com s HIGH CURRENT, HIGH SPEED SWITCHING s HIGH EFFICIENCY SWITCHING CIRCUITS DataShee ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( ) P tot Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o o Value 30 30 ± 20 55 39 220 80 0.53 -65 to 175 175 Un it V V V A A A W W /o C o o C C () Pulse width limited by safe operating area 10/01/2000 1/8 DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com STB55NF03L THERMAL DATA R thj -case R thj...