STB50NH02L

www.DataSheet4U.com N-CHANNEL 24V - 0.011 Ω - 50A D²PAK STripFET™ III POWER MOSFET TYPE STB50NH02L s s s s s s s STB50NH02L VDSS 24 V RDS(on) < 0.0135 Ω ID 50 A TYPICAL RDS(on) = 0.011 Ω @ 10 V TYPICAL RDS(on) = 0.015 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) 3 1 D²PAK TO-263 (Suffix “T4”) DESCRIPTION The STB50NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter applications where high efficiency is to be achieved. INTERNAL SCHEMATIC DIAGRAM DataSheet4U.com APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTERS DataShee ABSOLUTE MAXIMUM RATINGS Symbol Vspike(1) VDS VDGR VGS ID ID IDM(2) Ptot EAS (3) Tstg Tj Parameter Drain-source Voltage Rating Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 24 24 ± 20 50 36 200 60 0.4 200 -55 to 175 Unit V V V V A A A W W/°C mJ °C September 2003 1/11 DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com STB50NH02L THERMAL DATA Rthj-case R...