STB50NE10

www.DataSheet4U.com ® STB50NE10 N - CHANNEL 100V - 0.021Ω - 50A - D2PAK STripFET™ POWER MOSFET TYPE STB50NE10 s s s s s V DSS 100 V R DS(on) <0.027 Ω ID 50 A s TYPICAL RDS(on) = 0.021 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche INTERNAL SCHEMATIC DIAGRAM characteristics and less critical alignment steps DataSheet4U.com therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( ) P tot Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor dv/dt ( 1) Peak Diode Recovery voltage slope Ts tg Tj Storage Temperature Max. Operating Junction Temperature o o o D2PAK TO-263 (suffix ”T4”) DataSh ee Value 100 100 ± 20 50 35 200 150 1 6 -65 to 175 175 ( 1) ISD ≤ 50 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un...