2SK1517, 2SK1518
Silicon N-Channel MOS FET
Application
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High speed power switching
Features
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2SK1517, 2SK1518
Silicon N-Channel MOS FET
Application
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High speed power switching
Features
Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching
regulator, DC-DC converter
Outline
TO-3P
D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source
S
2SK1517, 2SK1518
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1517 2SK1518 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature
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Symbol VDSS
Ratings 450 500 ±30 20
Unit V
VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
V A A A W °C °C
80 20 120 150 –55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C
2
2SK1517, 2SK1518
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Symbol Min 2SK1517 V(BR)DSS 2SK1518 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 10 — — — — — — — — — — 0.20 0.22 16 3050 940 140 35 130 240 105 1.0 120 3.0 0.25 0.27 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 20 A, VGS = 0 I F = 20 A, VGS = 0, diF/dt = 100 A/µs I D = 10 A, VGS = 10 V, RL = 3 Ω I D = 10 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 10 A, VGS ...