K1518

2SK1517, 2SK1518 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1517, 2SK1518 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1517 2SK1518 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature www.DataSheet4U.com Symbol VDSS Ratings 450 500 ±30 20 Unit V VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 V A A A W °C °C 80 20 120 150 –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 2 2SK1517, 2SK1518 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1517 V(BR)DSS 2SK1518 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 10 — — — — — — — — — — 0.20 0.22 16 3050 940 140 35 130 240 105 1.0 120 3.0 0.25 0.27 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 20 A, VGS = 0 I F = 20 A, VGS = 0, diF/dt = 100 A/µs I D = 10 A, VGS = 10 V, RL = 3 Ω I D = 10 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 10 A, VGS ...