2N6400

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half–wave silicon gate–controlled, solid–state devices are needed. Glass Passivated Junctions with Center Gate Geometry for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 Volts Order this document by 2N6400/D 2N6400 thru 2N6405 SCRs 16 AMPERES RMS 50 thru 800 VOLTS G AK CASE 221A-07 (TO-220AB) STYLE 3 *MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse Voltage(1) (Gate Open, TJ = 25 to 125°C) 2N6400 2N6401 2N6402 2N6403 2N6404 2N6405 Symbol VDRM, VRRM Value 50 100 200 400 600 800 Unit Volts RMS On–State Current (TC = 90°C) Average On–State Current Peak Non-Repetitive Forward Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C) Circuit Fusing (t = 8.3 ms) IT(RMS) IT(AV) ITSM I2t 16 10 160 145 Amps Amps Amps A2s Forward Peak Gate Power Forward Average Gate Power Forward Peak Gate Current Operating Junction Temperature Range Storage Temperature Range THERMAL CHARACTERISTICS PGM PG(AV) IGM TJ Tstg 20 0.5 2 –40 to +125 –40 to +150 Watts Watt Amps °C °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.5 °C/W *Indicates...