2N3905

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3905/D General Purpose Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 40 Vdc 40 Vdc 5.0 Vdc 200 mAdc 625 mW 5.0 mW/°C Total Power Dissipation @ TA = 60°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD PD 250 mW 1.5 Watts 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS(1) Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (2) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. Indicates Data in addition to JEDEC Requirements. v v2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 2N3905 2N3906* *M...