128M bits SDRAM
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DATA SHEET
128M bits SDRAM
EDS1216AATA (8M words × 16 bits)
Description
The EDS1216AATA is a 128M ...
Description
www.DataSheet4U.com
DATA SHEET
128M bits SDRAM
EDS1216AATA (8M words × 16 bits)
Description
The EDS1216AATA is a 128M bits SDRAM organized as 2,097,152 words × 16 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the clock. It is packaged in 54-pin plastic TSOP (II).
Pin Configurations
/xxx indicate active low signal.
54-pin Plastic TSOP (II) VDD DQ0
VDDQ
Features
3.3V power supply Clock frequency: 133MHz (max.) Single pulsed /RAS ×16 organization 4 banks can operate simultaneously and independently Burst read/write operation and burst read/single write operation capability Programmable burst length (BL): 1, 2, 4, 8, full page 2 variations of burst sequence Sequential (BL = 1, 2, 4, 8, full page) Interleave (BL = 1, 2, 4, 8) Programmable /CAS latency (CL): 2, 3 Byte control by UDQM and LDQM Refresh cycles: 4096 refresh cycles/64ms 2 variations of refresh Auto refresh Self refresh TSOP (II) package with lead free solder (Sn-Bi)
DQ1 DQ2
VSSQ
DQ3 DQ4
VDDQ
DQ5 DQ6
VSSQ
(Top view)
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A0 to A11 BA0, BA1 DQ0 to DQ15 /CS /RAS /CAS /WE LDQM, UDQM CKE CLK VDD VSS VDDQ VSSQ NC
Address input Bank select address Data-input/output Chip select Row address strobe
Column address strobe
Write enable Input/output mask Clock enable Clock input
Power for internal circuit Ground for internal circuit
Power for DQ circuit Ground for DQ circuit No connection
Document No. E0411E40 (Ver. 4.0) Date Published ...
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