MRF899

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF899/D The RF Line NPN Silicon RF Power Transistor Designed for 26 Volt UHF large–signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM / AM equipment operating in the range 800 – 960 MHz. Specified 26 Volt, 900 MHz Characteristics Output Power = 150 Watts (PEP) Minimum Gain = 8.0 dB @ 900 MHz, Class AB Minimum Efficiency = 35% @ 900 MHz, 150 Watts (PEP) Maximum Intermodulation Distortion – 28 dBc @ 150 Watts (PEP) Characterized with Series Equivalent Large–Signal Parameters from 800 to 960 MHz Silicon Nitride Passivated 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, and Rated Output Power Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MRF899 150 W, 900 MHz RF POWER TRANSISTOR NPN SILICON CASE 375A–01, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector–Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCES VEBO IC PD Tstg Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 28 60 4.0 25 230 1.33 – 65 to + 150 Unit Vdc Vdc Vdc Adc Watts W/°C °C THERMAL CHARACTERISTICS Max 0.75 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C...