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MRF846
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRF846 is Designed for UFH Large-Signal, C...
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MRF846
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The MRF846 is Designed for UFH Large-Signal, Common Base Amplifier Applicatons Up to 960 MHz.
PACKAGE STYLE .230 6L FLG
A .040x45° 4X .025 R C B 2XØ.130
FEATURES INCLUDE:
Input Matching Network Min Gain 4.3 dB Gold Metalization
.115 .430 D E .125 G H I J K L F
MAXIMUM RATINGS
IC VCBO VCEO PDISS TJ TSTG θJC 14 A 36 V 16 V 150 W @ TC = 25 C -55 C to +200 C -55 C to +150 C 1.17 C/W
O O O O O O
DIM A B C D E F G H I J K L
MINIMUM
inches / mm
MAXIMUM
inches / mm
.355 / 9.02 .115 / 2.92 .075 / 1.91 .225 / 5.72 .090 / 2.29 .720 / 18.29 .970 / 24.64 .355 / 9.02 .004 / 0.10 .120 / 3.05 .160 / 4.06 .230 / 5.84
.365 / 9.27 .125 / 3.18 .085 / 2.16 .110 / 2.79 .730 / 18.54 .980 / 24.89 .365 / 9.27 .006 / 0.15 .130 / 3.30 .180 / 4.57 .260 / 6.60 .235 / 5.97
1 & 3 & 4 & 6 = BASE 2 = EMITTER 5 = COLLECTOR
CHARACTERISTICS
SYMBOL
BVCES BVCEO BVEBO ICBO hFE COB PG ηC IC = 50 mA IC = 50 mA
TC = 25 °C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36 16 4.0 10
UNITS
V V V mA --pF dB %
IE = 100 mA VCE = 15 V VCE = 5.0 V VCB = 12.5 V VCE = 12.5 V f = 870 MHz ICQ = 50mA IC = 2.0 mA f = 1.0 MHz POUT = 40 W
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10 85 4.3 50 5.2 55
150 100
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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