MRF840

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF840/D The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 volt UHF large–signal, common–base amplifier applications in industrial and commercial FM equipment operating in the range of 806 – 960 MHz. Specified 12.5 Volt, 870 MHz Characteristics Output Power = 10 Watts Power Gain = 6.0 dB Min Efficiency = 50% Min Series Equivalent Large–Signal Characterization Internally Matched Input for Broadband Operation Tested for Load Mismatch Stress at All Phase Angles with 20:1 VSWR @ 15.5 Volt Supply and 50% RF Overdrive Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Silicon Nitride Passivated MRF840 10 W, 870 MHz RF POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Characteristic Thermal Resistance, Junction to Case (2) Symbol RθJC Value 16 36 4.0 3.8 40 0.32 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C THERMAL CHARACTERISTICS Max 3.1 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS ww.DataSheet4U.com Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter...