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GT20J321
TOSHIBA Insulated Gate Bipolar TransistorSilicon N Chanenel IGBT
GT20J321
High Power Switching Applications Fast Switching Applications
• • • The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) Low switching loss • • : Eon = 0. 40 mJ (typ. ) : Eoff = 0. 43 mJ (typ. ) Low saturation voltage: VCE (sat) = 2. 0 V (typ. ) FRD included between emitter and collector Unit: mm
com High speed: tf = 0. 04 µs (typ. )
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction tempera...