STP2NC60FP

N-CHANNEL 600V - 7Ω - 1.9A - TO-220/TO-220FP PowerMesh™II MOSFET TYPE STP2NC60 STP2NC60FP s s s s s STP2NC60 STP2NC60FP VDSS 600 V 600 V RDS(on) <8Ω <8Ω ID 1.9 A 1.9 A TYPICAL RDS(on) = 7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 3 1 2 3 1 2 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER s TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT dv/dt VISO Tstg Tj . Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature –60 to 150 150 1.9 1.2 7.4 70 0.56 Value STP2NC60 600 600 ±30 1.9 (*) 1.2 (*) 7.4 (*) 30 0.24 3.5 2000 STP2NC60FP Unit V V V A A A W W/°C V/ns V °C °C ()Pulse width limited by safe operating area (1)ISD ≤1.9A, di/dt ≤100A/µs, VDD ...