STP45NE06L

www.DataSheet4U.com ® STP45NE06L STP45NE06LFP N - CHANNEL 60V - 0.022Ω - 45A - TO-220/TO-220FP STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STP45NE06L STP45NE06LFP s s s s s V DSS 60 V 60 V R DS(on) < 0.028 Ω < 0.028 Ω ID 45 A 25 A TYPICAL RDS(on) = 0.022 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC LOW THRESHOLD DRIVE 1 2 3 1 2 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s TO-220 TO-220FP www.DataSheet4U.com INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP45NE06L STP45NE06LFP V DS V DGR V GS ID ID I DM ( ) P tot VISO dv/dt Tstg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature 45 31 180 100 0.67  7 -65 to 175 175 (1) ISD ≤ 45 A, di/dt ≤ 300 A/µs, VDD ≤ V(B...