SBT10K45WS

www.DataSheet4U.com Silicon-Based Technology Corp. Small-Signal Schottky Barrier Diodes SBT10K45WS Series SBT10K45WS series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies (SBT®) developed by Silicon-Based Technology Corporation, which exhibit high-performance characteristics for modern switching, conversion and protection applications with high speed and low power consumptions. The package types as described in this data sheet are set forth in routine production; other packages are available upon special orders. Features and Advantages: Low forward voltage drop(VF) Low reverse leakage current (IR) Very small conduction power loss Very small switching power loss Very high switching speed Very high reliability www.DataSheet4U.com Electrical Characteristics : (@TA=25°C unless otherwise specified) Characteristic Reverse Breakdown Voltage (Note 2) Forward Voltage (Note 2) Reverse Current (Note 2) Total Capacitance Symbol Min. Typ. Max. Unit V(BR)R VFM IRM CT 45 350 0.07 6.0 380 0.5 mV µA pF Test Conditions IR=100µA IF=10mA VR=10V VR=10V, f=1.0MHZ SBT Silicon-Based Technology Corporation 1F,No.23, R&D Rd.I, Hsinchu Science Park, Taiwan, R.O.C Tel   886-3-5777897 Fax   886-3-5779832 DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com S BT SBT10K45WS Series Maximum Ratings : (@TA=25°C unless otherwise specified) Characteristic Peak Repetitive Reverse Voltage Working Peak Reve...