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SBT103AD Dataheets PDF



Part Number SBT103AD
Manufacturers Silicon-Based Technology
Logo Silicon-Based Technology
Description Small Signal Schottky Barrier Diodes
Datasheet SBT103AD DatasheetSBT103AD Datasheet (PDF)

www.DataSheet4U.com Silicon-Based Technology Corp. Small-Signal Schottky Barrier Diodes SBT103D Series SBT103D series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies (SBT®) developed by Silicon-Based Technology Corporation, which exhibit high-performance characteristics for modern switching, conversion and protection applications with high speed and low power consumptions. The package types as described in this data sheet are set for.

  SBT103AD   SBT103AD


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www.DataSheet4U.com Silicon-Based Technology Corp. Small-Signal Schottky Barrier Diodes SBT103D Series SBT103D series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies (SBT®) developed by Silicon-Based Technology Corporation, which exhibit high-performance characteristics for modern switching, conversion and protection applications with high speed and low power consumptions. The package types as described in this data sheet are set forth in routine production; other packages are available upon special orders. Features and Advantages: Low forward voltage drop(VF) Low reverse leakage current (IR) Very small conduction power loss Very small switching power loss Very high switching speed Very high reliability www.DataSheet4U.com Symbol VFM Electrical Characteristics : (@TA=25°C unless otherwise specified) Characteristic Reverse Breakdown Voltage SBT103AD SBT103BD SBT103CD Min. 40 30 20 Typ. - Max. - Unit V Test Conditions IRS=100µA Maximum Forward Voltage Drop Maximum Peak Reverse Current SBT103AD SBT103BD SBT103CD VFM IRM - - 0.35 0.50 5.0 V µA IF=20mA IF=200mA VR=30V VR=20V VR=10V - - Total Capacitance Cj trr - 50 10 - pF ns VR=0V, f=1.0MHZ IF=IR=50mA to 200mA, Irr=0.1 IR,RL=100Ω Reverse Recovery Time SBT Silicon-Based Technology Corporation 1F,No.23, R&D Rd.I, Hsinchu Science Park, Taiwan, R.O.C Tel   886-3-5777897 Fax   886-3-5779832 DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com S BT SBT103D Series Maximum Ratings : (@TA=25°C unless otherwise specified) Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Repetitive Peak Forward Current @t≤1.0s Non-Repetitive Peak Forward Surge Current 8.3ms Half Sine Wave Power Dissipation Thermal Resistance, Junction to Ambient Air Operating Temperature Range Storage Temperature Range Symbol VRRM VRWM VR VR(RMS) IFM IFRM 28 21 350 1.0 14 V mA A mA A mW ° C/W ° C ° C 40 30 20 V SBT103AD SBT103BD SBT103CD Unit IFSM Pd RθJA Tj TSTG 15 400 300 125 -55 to +125 www.DataSheet4U.com Package Data : • • • • Case: Molded Plastic Material (UL Flammability Classification 94V-0) Terminals: Solderable Plated Terminals (MIL-STD-202, Method 208) Lead Free Plating (Matte Tin Finish) Polarity: See device configurations below Approx. Weight: 0.13 grams. Package outline and dimensions (see below) • • ¡ DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com S BT SBT103D Series DO-35 A B A C D DIMENSIONS (MM) A Min. Max. 25.40 B 4.00 C 0.60 D 2.00 Ordering Information (Note 1) www.DataSheet4U.com Part Number SBT103AD SBT103BD SBT103CD Marking Code SBTJDA SBTJDB SBTJDC Packaging Type DO-35 DO-35 DO-35 Shipping 7″ Tape & Real 3K 3K 3K Notes: 1. Website at http://www.sbt.com.tw 2. Bulk package in a box form is also available upon request. 3. Day code marking is YM, in which Y represents year (For example: 2005 is marked by 5); M represents month in a year (For example: March is marked by C; November is marked by K). ¢ DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com .


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