SBT107WS

www.DataSheet4U.com Silicon-Based Technology Corp. Small-Signal Schottky Barrier Diodes SBT107WS Series SBT107WS series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies (SBT®) developed by Silicon-Based Technology Corporation, which exhibit high-performance characteristics for modern switching, conversion and protection applications with high speed and low power consumptions. The package types as described in this data sheet are set forth in routine production; other packages are available upon special orders. Features and Advantages: Low forward voltage drop(VF) Low reverse leakage current (IR) Very small conduction power loss Very small switching power loss Very high switching speed Very high reliability www.DataSheet4U.com Symbol Min. Typ. Max. Unit V(BR)R 30 280 500 600 1.0 µA pF mV V Electrical Characteristics : (@TA=25°C unless otherwise specified) Characteristic Reverse Breakdown Voltage (Note 2) Test Conditions IR=100µA @IF=2.0mA @IF=15mA @ IF=50mA @IF=100mA VR=25V VR=0V, f=1.0MHZ Forward Voltage (Note 2) VFM - 320 450 550 7 Reverse Current (Note 2) Total Capacitance IRM CT - SBT Silicon-Based Technology Corporation 1F,No.23, R&D Rd.I, Hsinchu Science Park, Taiwan, R.O.C Tel   886-3-5777897 Fax   886-3-5779832 DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com S BT SBT107WS Series Maximum Ratings : (@TA=25°C unless otherwise specified) Characteristic Peak...