Document
TC74HCT08AP/AF
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74HCT08AP, TC74HCT08AF
Quad 2-Input AND Gate
The TC74HCT08A is a high speed CMOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.
This device may be used as a level converter for interfacing TTL or NMOS to High Speed CMOS. The inputs are compatible with TTL, NMOS and CMOS output voltage levels.
The internal circuit is composed of 4-stages including buffer output, which provide high noise immunity and stable output.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
Features
• High speed: tpd = 10 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 1 μA (max) at Ta = 25°C • Compatible with TTL outputs: VIH = 2 V (min)
VIL = 0.8 V (max) • Wide interfacing ability: LSTTL, NMOS, CMOS • Output drive capability: 10 LSTTL loads • Symmetrical output impedance: |IOH| = IOL = 4 mA (min) • Balanced propagation delays: tpLH ∼− tpHL • Pin and function compatible with 74LS08
Pin Assignment
TC74HCT08AP TC74HCT08AF
Weight DIP14-P-300-2.54 SOP14-P-300-1.27A
: 0.96 g (typ.) : 0.18 g (typ.)
Start of commercial production
1988-11
1
2014-03-01
IEC Logic Symbol
TC74HCT08AP/AF
Truth Table
A
B
Y
L
L
L
L
H
L
H
L
L
H
H
H
Absolute Maximum Ratings (Note 1)
Characteristics
Symbol
Rating
Unit
Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature
VCC VIN VOUT IIK IOK IOUT ICC PD Tstg
−0.5 to 7
V
−0.5 to VCC + 0.5
V
−0.5 to VCC + 0.5
V
±20
mA
±20
mA
±25
mA
±50
mA
500 (DIP) (Note 2)/180 (SOP)
mW
−65 to 150
°C
Note 1:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C shall be applied until 300 mW
Operating Ranges (Note)
Characteristics
Symbol
Rating
Unit
Supply voltage Input voltage Output voltage Operating temperature Input rise and fall time
VCC VIN VOUT Topr tr, tf
4.5 to 5.5
V
0 to VCC
V
0 to VCC
V
−40 to 85
°C
0 to 500
ns
Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND.
2
2014-03-01
TC74HCT08AP/AF
Electrical Characteristics
DC Characteristics
Characteristics
High-level input voltage Low-level input voltage
High-level output voltage
Low-level output voltage
Input leakage current
Quiescent supply current
Symbol VIH
Test Condition
Ta = 25°C
Ta = −40 to 85°C Unit
VCC (V) Min Typ. Max Min Max
⎯
4.5 to 5.5 2.0
⎯
⎯
2.0
⎯
V
VIL
⎯
4.5 to 5.5 ⎯
⎯
0.8
⎯
0.8
V
VOH
VIN = VIH or VIL
IOH = −20 μA IOH = −4 mA
4.5 4.5
VOL
VIN = VIH or VIL
IOL = 20 μA IOL = 4 mA
4.5 4.5
4.4 4.5
⎯
4.4
⎯
V
4.18 4.31 ⎯ 4.13 ⎯
⎯
0.0 0.1
⎯
0.1
V
⎯ 0.17 0.26 ⎯ 0.33
IIN
VIN = VCC or GND
5.5
⎯
⎯ ±0.1 ⎯ ±1.0 μA
ICC VIN = VCC or GND
5.5
Per input: VIN = 0.5 V or 2.4 V
IC
5.5
Other input: VCC or GND
⎯
⎯
1.0
⎯ 10.0 μA
⎯
⎯
2.0
⎯
2.9 mA
AC Characteristics (CL = 15 pF, VCC = 5 V, Ta = 25°C, input: tr = tf = 6 ns)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Output transition time Propagation delay time
tTLH tTHL tpLH tpHL
⎯
⎯
6
12
ns
⎯
⎯
10
16
ns
AC Characteristics (CL = 50 pF, input: tr = tf = 6 ns)
Characteristics
Symbol
Output transition time
Propagation delay time
Input capacitance
Power dissipation capacitance
tTLH tTHL tpLH tpHL CIN CPD
(Note)
Test Condition
Ta = 25°C
Ta = −40 to 85°C Unit
VCC (V) Min Typ. Max Min Max
4.5
⎯
8
15
⎯
19
⎯
ns
5.5
⎯
7
13
⎯
16
4.5
⎯
13
20
⎯
25
⎯
ns
5.5
⎯
11
18
⎯
23
⎯
⎯
5
10
⎯
10
pF
⎯
⎯
24
⎯
⎯
⎯
pF
Note:
CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD・VCC・fIN + ICC/4 (.