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TC74HCT08AF Dataheets PDF



Part Number TC74HCT08AF
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Quad 2-Input AND Gate
Datasheet TC74HCT08AF DatasheetTC74HCT08AF Datasheet (PDF)

TC74HCT08AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HCT08AP, TC74HCT08AF Quad 2-Input AND Gate The TC74HCT08A is a high speed CMOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. This device may be used as a level converter for interfacing TTL or NMOS to High Speed CMOS. The inputs are compatible with TTL, NMOS and CMOS output voltage level.

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TC74HCT08AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HCT08AP, TC74HCT08AF Quad 2-Input AND Gate The TC74HCT08A is a high speed CMOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. This device may be used as a level converter for interfacing TTL or NMOS to High Speed CMOS. The inputs are compatible with TTL, NMOS and CMOS output voltage levels. The internal circuit is composed of 4-stages including buffer output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. Features • High speed: tpd = 10 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 1 μA (max) at Ta = 25°C • Compatible with TTL outputs: VIH = 2 V (min) VIL = 0.8 V (max) • Wide interfacing ability: LSTTL, NMOS, CMOS • Output drive capability: 10 LSTTL loads • Symmetrical output impedance: |IOH| = IOL = 4 mA (min) • Balanced propagation delays: tpLH ∼− tpHL • Pin and function compatible with 74LS08 Pin Assignment TC74HCT08AP TC74HCT08AF Weight DIP14-P-300-2.54 SOP14-P-300-1.27A : 0.96 g (typ.) : 0.18 g (typ.) Start of commercial production 1988-11 1 2014-03-01 IEC Logic Symbol TC74HCT08AP/AF Truth Table A B Y L L L L H L H L L H H H Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature VCC VIN VOUT IIK IOK IOUT ICC PD Tstg −0.5 to 7 V −0.5 to VCC + 0.5 V −0.5 to VCC + 0.5 V ±20 mA ±20 mA ±25 mA ±50 mA 500 (DIP) (Note 2)/180 (SOP) mW −65 to 150 °C Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C shall be applied until 300 mW Operating Ranges (Note) Characteristics Symbol Rating Unit Supply voltage Input voltage Output voltage Operating temperature Input rise and fall time VCC VIN VOUT Topr tr, tf 4.5 to 5.5 V 0 to VCC V 0 to VCC V −40 to 85 °C 0 to 500 ns Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. 2 2014-03-01 TC74HCT08AP/AF Electrical Characteristics DC Characteristics Characteristics High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage Input leakage current Quiescent supply current Symbol VIH Test Condition Ta = 25°C Ta = −40 to 85°C Unit VCC (V) Min Typ. Max Min Max ⎯ 4.5 to 5.5 2.0 ⎯ ⎯ 2.0 ⎯ V VIL ⎯ 4.5 to 5.5 ⎯ ⎯ 0.8 ⎯ 0.8 V VOH VIN = VIH or VIL IOH = −20 μA IOH = −4 mA 4.5 4.5 VOL VIN = VIH or VIL IOL = 20 μA IOL = 4 mA 4.5 4.5 4.4 4.5 ⎯ 4.4 ⎯ V 4.18 4.31 ⎯ 4.13 ⎯ ⎯ 0.0 0.1 ⎯ 0.1 V ⎯ 0.17 0.26 ⎯ 0.33 IIN VIN = VCC or GND 5.5 ⎯ ⎯ ±0.1 ⎯ ±1.0 μA ICC VIN = VCC or GND 5.5 Per input: VIN = 0.5 V or 2.4 V IC 5.5 Other input: VCC or GND ⎯ ⎯ 1.0 ⎯ 10.0 μA ⎯ ⎯ 2.0 ⎯ 2.9 mA AC Characteristics (CL = 15 pF, VCC = 5 V, Ta = 25°C, input: tr = tf = 6 ns) Characteristics Symbol Test Condition Min Typ. Max Unit Output transition time Propagation delay time tTLH tTHL tpLH tpHL ⎯ ⎯ 6 12 ns ⎯ ⎯ 10 16 ns AC Characteristics (CL = 50 pF, input: tr = tf = 6 ns) Characteristics Symbol Output transition time Propagation delay time Input capacitance Power dissipation capacitance tTLH tTHL tpLH tpHL CIN CPD (Note) Test Condition Ta = 25°C Ta = −40 to 85°C Unit VCC (V) Min Typ. Max Min Max 4.5 ⎯ 8 15 ⎯ 19 ⎯ ns 5.5 ⎯ 7 13 ⎯ 16 4.5 ⎯ 13 20 ⎯ 25 ⎯ ns 5.5 ⎯ 11 18 ⎯ 23 ⎯ ⎯ 5 10 ⎯ 10 pF ⎯ ⎯ 24 ⎯ ⎯ ⎯ pF Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD・VCC・fIN + ICC/4 (.


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