IRFP340

www.DataSheet4U.com IRFP340 Data Sheet July 1999 File Number 2088.3 11A, 400V, 0.550 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17424. Features 11A, 400V rDS(ON) = 0.550Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFP340 PACKAGE TO-247 BRAND IRFP340 Symbol D NOTE: When ordering, include the entire part number. G S www.DataSheet4U.com Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (FLANGE) 4-329 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com IRFP340 Absolute Maximum Ratings TC = 25oC, Unless Oth...