GU (General Use)-E Type 1-Channel (Form B) 4-pin Type
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AQY41rEH
GU (General Use)-E Type 1-Channel (Form B) 4-pin Type FEATURES
4.78 .188 6.4 .252 3.2 .126...
Description
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AQY41rEH
GU (General Use)-E Type 1-Channel (Form B) 4-pin Type FEATURES
4.78 .188 6.4 .252 3.2 .126
TESTING
PhotoMOS RELAYS
3. Compact 4-pin DIP size The device comes in a compact (W)6.4×(L)4.78×(H)3.2mm (W).252×(L).188×(H).126inch, 4-pin DIP size 4. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion. 5. High sensitivity, low ON resistance Can control a maximum 0.13 A load current with a 5 mA input current. Low ON resistance of 18Ω (AQY410EH). Stable operation because there are no metallic contact parts. 6. Low-level off state leakage current
4.78 .188
6.4 .252 2.9 .114
mm inch
1. Low on resistance for normallyclosed type This has been realized thanks to the builtin MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS
Cross section of the normally-closed type of power MOS
,
4
Passivation membrane Intermediate Source electrode Gate electrode insulating membrane Gate oxidation membrane
1
, ,
2 3
N+ P+ N+ N+ P+ N+ N–
Drain electrode
N+
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Part No. Through hole terminal Tube packing style AQY410EH AQY414EH AQY410EHA AQY414EHA Surface-mount terminal Tape and reel packing style Picked from the Picked from the 1/2-pin side 3/4-pin side AQY410EHAX AQY410EHAZ AQY414EHAX AQY414EHAZ
2. Rein...
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